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| New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 20 20 RDS(on) () 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20 18.9 Qg (Typ.) 9.6 14.1 FEATURES * TrenchFET(R) Power MOSFET * 100 % Rg Tested * 100 % UIS Tested RoHS COMPLIANT APPLICATIONS * DC/DC Converters - Game Stations - Notebook PC Logic SCHOTTKY PRODUCT SUMMARY VDS (V) 20 VSD (V) Diode Forward Voltage 0.55 V at 2.5 A SO-14 D1 D1 G1 G2 S2 S2 S2 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 S1 S1 D2 D2 D2 D2 D2 IF (A) 2 D1 D2 Schottky Diode G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET Ordering Information: SI4340CDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Source-Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS IAS EAS 3 1.9 2b, c 1.3b, c - 55 to 150 ID Symbol VDS VGS Channel-1 20 20 14.1 11.2 11.5b, c 9.2 40 b, c Channel-2 20 16 20 16.5 15.2b, c 12.2b, c 50 4.5 2.5b, c 5 1.25 5.4 3.5 3b, c 1.9b, c Unit V A 2.5 1.7b, c mJ W C THERMAL RESISTANCE RATINGS Channel-1 Parameter Maximum Junction-to-Ambientb, d t 10 s Steady State Maximum Junction-to-Foot (Drain) Symbol RthJA RthJF Typ. 53 35 Max. 62.5 42 Channel-2 Typ. 35 18 Max. 42 23 Unit C/W Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions for channel 1 is 110 C/W and channel 2 is 87 C/W. Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 1 New Product Si4340CDY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = 250 A ID = 250 A ID = 25 mA ID = 250 A ID = 25 mA VDS = VGS, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 0 V, VGS = 16 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 C VDS = 20 V, VGS = 0 V, TJ = 85 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V VDS 5 V, VGS = 10 V VGS = 10 V, ID = 11.5 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 15.2 A VGS = 4.5 V, ID = 10 A VGS = 4.5 V, ID = 14 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 11.5 A Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 15.2 A Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 11.5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 15.2 A f = 1 MHz Ch-1 Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 1300 1900 330 500 150 160 21 31 9.6 14.1 4 5 3 3.5 0.65 1.4 1.2 2.8 32 47 15 22 nC pF gfs VDS = 10 V, ID = 11.5 A VDS = 10 V, ID = 15.2 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.0077 0.0094 0.0065 0.010 45 73 0.008 0.0125 1 0.8 20 20 20 22 - 5.5 - 2.5 3 2.2 100 100 1 100 15 10 000 A A V nA mV/C V Symbol Test Conditions Min. Typ. Max. Unit 0.0075 0.0095 S Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. www.vishay.com 2 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time a Symbol Test Conditions Ch-1 Channel-1 VDD = 10 V, RL = 1.1 ID 9.2 A, VGEN = 4.5 V, Rg = 1 Channel-2 VDD = 10 V, RL = 1 ID 10 A, VGEN = 4.5 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Channel-1 VDD = 10 V, RL = 1.1 ID 9.2 A, VGEN = 10 V, Rg = 1 Channel-2 VDD = 10 V, RL = 1 ID 10 A, VGEN = 10 V, Rg = 1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 IS = 9.2 A IS = 2.5 A Ch-1 Ch-2 Ch-1 Ch-2 Channel-1 IF = 9.2 A, di/dt = 100 A/s, TJ = 25 C Channel-2 IF = 2.5 A, di/dt = 100 A/s, TJ = 25 C Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Min. Typ. 20 22 10 10 20 32 10 10 10 10 10 10 20 25 10 10 Max. 30 35 15 15 30 50 15 15 15 15 15 15 30 40 15 15 2.5 4.5 40 50 Unit td(on) tr td(off) tf td(on) tr td(off) tf ns IS ISM VSD trr Qrr ta tb TC = 25 C A 0.8 0.45 30 30 15 20 12 14 18 16 1.2 0.55 60 60 25 30 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 3 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 40 VGS = 10 thru 4 V 8 I D - Drain Current (A) I D - Drain Current (A) 30 10 TC = - 55 C 6 TC = 25 C 4 20 VGS = 3 V 10 2 TC = 125 C VGS = 2 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.015 1500 Transfer Characteristics Ciss R DS(on) - On-Resistance () 0.013 C - Capacitance (pF) 1200 0.011 VGS = 4.5 V 900 0.009 VGS = 10 V 0.007 600 Coss 300 Crss 0.005 0 10 20 ID - Drain Current (A) 30 40 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 11.5 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 16 V 4 R DS(on) - On-Resistance 1.6 1.5 1.4 1.3 (Normalized) 1.2 1.1 1.0 0.9 0.8 0 0 5 10 15 20 25 0.7 - 50 ID = 11.5 A Capacitance VGS = 10 V, 4.5 V 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.030 ID = 11.5 A 0.025 R DS(on) - On-Resistance () I S - Source Current (A) 0.020 TJ = 150 C 10 TJ = 25 C 0.015 TJ = 125 C 0.010 TJ = 25 C 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.2 30 On-Resistance vs. Gate-to-Source Voltage 2.0 ID = 250 A 1.8 V GS(th) (V) Power (W) 25 20 1.6 15 1.4 10 1.2 5 1.0 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* Single Pulse Power 10 I D - Drain Current (A) 100 s 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 1 BVDSS Limited 10 1s 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 5 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 18 3.0 15 I D - Drain Current (A) 2.5 12 Power (W) 2.0 9 1.5 6 1.0 3 0.5 0 0 25 50 75 100 125 150 0.0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 C/W Notes: Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 7 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) VGS = 3 V 8 10 TC - 55 C 30 6 TC = 25 C 4 20 10 VGS = 2 V 0 0.0 0.4 0.8 1.2 1.6 2.0 2 TC = 125 C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.009 2500 Ciss RDS(on) - On-Resistance () 0.008 VGS = 4.5 V 0.007 C - Capacitance (pF) 2000 Transfer Characteristics 1500 0.006 VGS = 10 V 1000 Coss 500 Crss 0 5 10 15 20 0.005 0.004 0 10 20 30 40 50 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 10 ID = 15.2 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 16 V 4 R DS(on) - On-Resistance (Normalized) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0 0 7 14 21 28 35 0.7 - 50 ID = 15.2 A Capacitance VGS = 10 V, 4.5 V 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 8 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.020 ID = 15.2 A RDS(on) - On-Resistance () 0.015 I S - Source Current (A) TJ = 150 C 10 TJ = 25 C TJ = 125 C 0.010 0.005 TJ = 25 C 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 100 10 I R - Reverse Current (mA) 60 1 Power (W) 80 On-Resistance vs. Gate-to-Source Voltage 10-1 VDS = 20 V 10-2 40 20 10-3 VDS = 16 V 0 0.001 10-4 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Reverse Current vs. Junction Temperature 100 Single Pulse Power Limited by RDS(on)* 10 I D - Drain Current (A) 100 s 1 ms 10 ms 1 100 ms 1s 0.1 TA = 25 C Single Pulse 0.01 0.1 1 BVDSS Limited 10 10 s DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 9 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 6 20 I D - Drain Current (A) Package Limited 15 Power (W) 5 4 3 10 2 5 1 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 68398 S-81547-Rev. B, 07-Jul-08 New Product Si4340CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 Notes: 2. Per Unit Base = RthJA = 70 C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68398. Document Number: 68398 S-81547-Rev. B, 07-Jul-08 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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